? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c37a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c64a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 20..120 / 4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 32a, note 1 95 m polar tm power mosfet hiperfet tm (electrically isolated back surface) n-channel enhancement mode avalanche rated IXFR64N50P v dss = 500v i d25 = 37a r ds(on) 95m g = gate d = drain s = source isolated tab isoplus247 e153432 ds99412f(5/09) t rr 200ns features international standard package fast intrinsic rectifier avalanche rated low r ds(on) and q g low package inductance advantages high power density easy to mount space savings applications switched-mode and resonant-mode power supplies dc-dc converters laser drivers ac and dc motor drives robotics and servo controls
IXFR64N50P ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. isoplus247 (ixfr) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 32a, note 1 30 50 s c iss 9700 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 970 pf c rss 30 pf t d(on) 30 ns t r 25 ns t d(off) 85 ns t f 22 ns q g(on) 150 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 32a 50 nc q gd 50 nc r thjc 0.42 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 64 a i sm repetitive, pulse width limited by t jm 250 a v sd i f = 64a, v gs = 0v, note 1 1.5 v t rr 200 ns q rm 0.6 c i rm 6.0 a i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 32a r g = 2 (external)
? 2009 ixys corporation, all rights reserved IXFR64N50P fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v ds - volts i d - amperes v gs = 10v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6v fig. 4. r ds(on) normalized to i d = 32a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 64a i d = 32a fig. 5. r ds(on) normalized to i d = 32a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 0 20 40 60 80 100 120 140 160 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFR64N50P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 3.03.54.04.55.05.56.06.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 220 240 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 250v i d = 32a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.010 0.100 1.000 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_64n50p(9j)04-27-09
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